Researchers from the Max Planck Institute for Polymer Research, Hong Kong Polytechnic University, University of Toronto and Norwegian University of Science and Technology (NTNU) have developed a new processing strategy that enables the formation of highly ordered Dion-Jacobson (DJ) phase tin-based perovskite thin films, addressing a key bottleneck in their application in field-effect transistors (FETs). Schematic illustration of the SVAD process for deposition of DJ-type 2D layered Sn-based perovskite thin films. Image from: JACS DJ perovskites are an emerging class of semiconductors composed of inorganic [SnI 6 ] 4− octahedral layers separated by organic diammonium cations. While their structure offers enhanced stability compared to other layered perovskites, their practical implementation has been limited by poor control over nucleation and crystallization during solution processing. In particular, the requirement that diammonium cations simultaneously connect adjacent inorganic layers makes the self-assembly of well-ordered films significantly more difficult. To overcome this challenge, the researchers introduced a solvent vapor assisted drop casting (SVAD) method.
New solvent vapor-assisted process enables high-performance perovskite transistors
