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Cambridge researchers propose Hf(Sr,Ti)O2 memristors for neuromorphic devices.

Cambridge researchers propose Hf(Sr,Ti)O2 memristors for neuromorphic devices.

Researchers at the University of Cambridge have proposed an answer to escalating energy consumption of AI hardware – multicomponent p-type Hf(Sr,Ti)O2 thin films for memristor-based neuromorphic devices. ‘Neuromorphic computing offers ... The post Cambridge researchers propose Hf(Sr,Ti)O2 memristors for neuromorphic devices. appeared first on Electronics Weekly .